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STA5063Z Datasheet(PDF) 2 Page - RF Micro Devices |
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STA5063Z Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 10 page 2 of 10 DS110205 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. STA-5063Z Simplified Device Schematic Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lD)80 mA ESD Rating (HBM) 1000 V Total Device Current (I) 80 mA Device Voltage (Pins 1 and 3) 4 V Device Voltage (Pin 4) 5.5 V Max RF Input Power 15 dBm Power Dissipation 0.40 W Max Junction Temperature (TJ) 150 °C Operating Temperature Range (TL) -40 to + 85 °C Max Storage Temperature -40to+150 °C Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Active Bias PIN 1 PIN 2 PIN 5 PIN 6 PIN 3 PIN 4 |
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