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IRF7450PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7450PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRF7450PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 2.6 ––– ––– S VDS = 50V, ID = 1.5A Qg Total Gate Charge ––– 26 39 ID = 1.5A Qgs Gate-to-Source Charge ––– 6.0 9.0 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– 12 18 VGS = 10V, td(on) Turn-On Delay Time ––– 10 ––– VDD = 100V tr Rise Time ––– 3.0 ––– ID = 1.5A td(off) Turn-Off Delay Time ––– 17 ––– RG = 6.0Ω tf Fall Time ––– 18 ––– VGS = 10V Ciss Input Capacitance ––– 940 ––– VGS = 0V Coss Output Capacitance ––– 160 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 33 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1100 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 66 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 25 ––– VGS = 0V, VDS = 0V to 160V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 230 mJ IAR Avalanche Current ––– 2.5 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 1.5A, VGS = 0V trr Reverse Recovery Time ––– 97 146 ns TJ = 25°C, IF = 1.5A Qrr Reverse RecoveryCharge ––– 350 525 nC di/dt = 100A/µs Diode Characteristics 2.3 20 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.17 Ω VGS = 10V, ID = 1.5A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current |
Número de pieza similar - IRF7450PBF_15 |
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Descripción similar - IRF7450PBF_15 |
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