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IRF7509PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7509PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7509PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions N-Ch 30 VGS = 0V, ID = 250µA P-Ch -30 VGS = 0V, ID = -250µA N-Ch 0.059 Reference to 25°C, ID = 1mA P-Ch -0.039 Reference to 25°C, ID = -1mA 0.09 0.110 VGS = 10V, ID = 1.7A 0.14 0.175VGS = 4.5V, ID = 0.85A 0.17 0.20 VGS = -10V, ID =-1.2A 0.30 0.40 VGS = -4.5V, ID =-0.6A N-Ch 1.0 VDS = VGS, ID = 250µA P-Ch -1.0 VDS = VGS, ID = -250µA N-Ch 1.9 VDS = 10V, ID = 0.85A P-Ch 0.92 VDS = -10V, ID = -0.6A N-Ch 1.0 VDS = 24 V, VGS = 0V P-Ch -1.0 VDS = -24V, VGS = 0V N-Ch 25VDS = 24 V, VGS = 0V, TJ = 125°C P-Ch -25VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ± 20V N-Ch 7.8 12 P-Ch 7.511 N-Ch 1.2 1.8 P-Ch 1.3 1.9 N-Ch 2.53.8 P-Ch 2.53.7 N-Ch 4.7 P-Ch 9.7 N-Ch 10 P-Ch 12 N-Ch 12 P-Ch 19 N-Ch 5.3 P-Ch 9.3 N-Ch 210 P-Ch 180 N-Ch 80 pF P-Ch 87 N-Ch 32 P-Ch 42 V(BR)DSS Drain-to-SourceBreakdownVoltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs ForwardTransconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 21 ) Notes: N-Channel ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Parameter Min. Typ. Max. Units Conditions N-Ch 1.25 P-Ch -1.25 N-Ch 21 P-Ch -16 N-Ch 1.2 TJ = 25°C, IS = 1.7A, VGS = 0V P-Ch -1.2 TJ = 25°C, IS = -1.8A, VGS = 0V N-Ch 40 60 P-Ch 30 45 N-Ch 48 72 P-Ch 37 55 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Source-Drain Ratings and Characteristics V V/°C Ω V S µA nC ns N-Channel ID = 1.7A, VDS = 24V, VGS = 10V P-Channel ID = -1.2A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, ID = 1.7A, RG = 6.1Ω, RD = 8.7Ω P-Channel VDD = -15V, ID = -1.2A, RG = 6.2Ω, RD = 12Ω N-Channel VGS = 0V, VDS = 25V, = 1.0MHz P-Channel VGS = 0V, VDS = -25V, = 1.0MHz N-Ch P-Ch IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF = 1.7A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -1.2A, di/dt = -100A/µs Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. |
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