2N6488G datasheet(3/6 Pages) ONSEMI

No. de pieza	2N6488G

Descripción Electrónicos	Complementary Silicon Plastic Power Transistors

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)

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3

80

40

20

0

20

40

80

100

120

160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

60

TA

TC

4.0

2.0

1.0

3.0

0

60

140

TA

TC

0

Figure 2. Switching Time Test Circuit

1000

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

500

50

20

0.2

20

TC = 25°C

VCC = 30 V

IC/IB = 10

10

1.0

5.0

tr

0.5

2.0

10

200

100

td @ VBE(off) [ 5.0 V

NPN

PNP

+ 10 V

0

SCOPE

RB

- 4 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25

ms

- 10 V

D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

FOR PNP, REVERSE ALL POLARITIES.

VCC

+ 30 V

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1.0 k

500

ZqJC (t) = r(t) RqJC

RqJC = 1.67°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

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