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IRF7815PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF7815PBF
Descripción Electrónicos  Synchronous MOSFET for Notebook Processor Power
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7815PBF Datasheet(HTML) 2 Page - International Rectifier

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IRF7815PbF
2
www.irf.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.17
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
34
43
m
VGS(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-12.2
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
8.2
–––
–––
S
Qg
Total Gate Charge
–––
25
38
Qgs1
Pre-Vth Gate-to-Source Charge
–––
6.5
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.3
–––
Qgs
Gate-to-Source Charge
–––
7.8
–––
Qgd
Gate-to-Drain Charge
–––
7.4
–––
See Figs. 6, 16a & 16b
Qgodr
Gate Charge Overdrive
–––
9.8
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
8..7
–––
Qoss
Output Charge
–––
10
–––
nC
RG
Gate Resistance
–––
1.02
–––
td(on)
Turn-On Delay Time
–––
8.4
–––
tr
Rise Time
–––
3.2
–––
td(off)
Turn-Off Delay Time
–––
14
–––
tf
Fall Time
–––
8.3
–––
Ciss
Input Capacitance
–––
1647
–––
Coss
Output Capacitance
–––
129
–––
Crss
Reverse Transfer Capacitance
–––
30
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
41
62
ns
Qrr
Reverse Recovery Charge
–––
213
320
nC
ID = 3.1A
VGS = 0V
VDS = 75V
pF
Typ.
–––
RG = 1.8Ω
–––
VDS = 150V, VGS = 0V, TJ = 125°C
VDS = VGS, ID = 100µA
VDS = 150V, VGS = 0V
VGS = 10V
VDS = 75V
VGS = 20V
VGS = -20V
VDS = 50V, ID = 3.1A
TJ = 25°C, IF = 3.1A, VDD = 75V
di/dt = 300A/µs
e
TJ = 25°C, IS = 3.1A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VDS = 16V, VGS = 0V
VDD = 75V, VGS = 10V e
ID = 3.1A
Conditions
See Figs. 15a & 15b
Max.
529
3.1
ƒ = 1.0MHz
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.1A
e
µA
nA
nC
ns
A
2.3
–––
–––
–––
–––
41


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