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IRF7834PBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF7834PBF
Descripción Electrónicos  Synchronous MOSFET for Notebook Processor Power
Download  10 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7834PBF Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
9/21/04
IRF7834PbF
HEXFET® Power MOSFET
Notes
 through … are on page 10
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
PD - 95292
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
VDSS
RDS(on) max
Qg (typ.)
30V 4.5m
:@V
GS = 10V
29nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
f
W
PD @TA = 70°C
Power Dissipation
f
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
g
–––
20
°C/W
RθJA
Junction-to-Ambient
fg
–––
50
Max.
19
16
160
± 20
30
-55 to + 150
2.5
0.02
1.6


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