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BUJ106A Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUJ106A Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 9 page NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A Fig.13. Reverse bias safe operating area (T j < Tjmax) for -V be = 5V,3V and 1V. Fig.14. Test circuit for reverse bias safe operating area. V clamp < 1000V; Vcc = 150V; -Vbe = 5V,3V & 1V; L B = 1µH; LC = 200µH 0 100 200 300 400 500 600 700 800 900 0 2 4 6 8 10 12 14 VCEclamp/V IC/A -5V -3V -1V LB IBon -VBB LC T.U.T. VCC PROBE POINT VCL(RBSOAR) March 1999 5 Rev 2.000 |
Número de pieza similar - BUJ106A_15 |
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Descripción similar - BUJ106A_15 |
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