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BCV27 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BCV27 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2004 Jan 13 3 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BCV27 − 40 V BCV47 − 80 V VCES collector-emitter voltage open base BCV27 − 30 V BCV47 − 60 V VEBO emitter-base voltage open collector − 10 V IC collector current (DC) − 500 mA ICM peak collector current − 800 mA IB base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W |
Número de pieza similar - BCV27_15 |
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Descripción similar - BCV27_15 |
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