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KDS112E Datasheet(PDF) 1 Page - KEC(Korea Electronics)

No. de pieza KDS112E
Descripción Electrónicos  SILICON EPITAXIAL TYPE DIODE
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Fabricante Electrónico  KEC [KEC(Korea Electronics)]
Página de inicio  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KDS112E Datasheet(HTML) 1 Page - KEC(Korea Electronics)

  KDS112E_15 Datasheet HTML 1Page - KEC(Korea Electronics) KDS112E_15 Datasheet HTML 2Page - KEC(Korea Electronics)  
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2014. 3. 31
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS112E
SILICON EPITAXIAL TYPE DIODE
Revision No : 2
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
・Small Package.
・Small Total Capacitance : C
T=1.2pF(Max.).
・Low Series Resistance : r
S=0.6Ω(Typ.).
MAXIMUM RATING (Ta=25
℃)
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.20
0.85 0.10
0.70 0.10
1.60 0.10
0.39 0.10
C
F
1
3
2
E
B
FF
D
J
+
_
+
_
+
_
+
_
0.27 0.10
+
_
+
_
1.00 0.10
0.50
0.13 0.05
G
H
J
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
VR
30
V
Forward Current
IF
50
mA
Junction Temperature
Tj
125
℃
Storage Temperature Range
Tstg
-55
～125
℃
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IF=2mA
-
-
0.85
V
Reverse Current
IR
VR=15V
-
-
0.1
μA
Reverse Voltage
VR
IR=1μ
A
30
-
-
V
Total Capacitance
CT
VR=6V, f=1MHz
-
0.8
1.2
pF
Series Resistance
rs
IF=2mA, f=100MHz
-
0.6
0.9
Ω
Marking
B F


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