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IRFP4137PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFP4137PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRFP4137PbF 2 www.irf.com © 2012 International Rectifier October 30, 2012 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.24 ––– V/°C Reference to 25°C, ID = 3.5mA RDS(on) Static Drain-to-Source On-Resistance ––– 56 69 m VGS = 10V, ID = 24A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =300 V, VGS = 0V ––– ––– 250 VDS =300V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 1.3 ––– Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) gfs Forward Transconductance 45 ––– ––– S VDS = 50V, ID =24A Qg Total Gate Charge ––– 83 125 nC ID = 24A Qgs Gate-to-Source Charge ––– 28 42 VDS = 150V Qgd Gate-to-Drain Charge ––– 26 39 VGS = 10V td(on) Turn-On Delay Time ––– 18 ––– ns VDD = 195V tr Rise Time ––– 23 ––– ID = 24A td(off) Turn-Off Delay Time ––– 34 ––– RG= 2.2 tf Fall Time ––– 20 ––– VGS = 10V Ciss Input Capacitance ––– 5168 ––– pF VGS = 0V Coss Output Capacitance ––– 300 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 77 ––– ƒ = 1.0MHz Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 196 ––– VGS = 0V, VDS = 0V to 240V See Fig.11 Coss eff.(TR) Output Capacitance (Time Related) ––– 265 ––– VGS = 0V, VDS = 0V to 240V Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 40 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 160 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 24A,VGS = 0V trr Reverse Recovery Time ––– 302 ––– ns TJ = 25°C VDD = 255V ––– 379 ––– TJ = 125°C IF = 24A, Qrr Reverse Recovery Charge ––– 1739 ––– nC TJ = 25°C di/dt = 100A/µs ––– 2497 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 13 ––– A TJ = 25°C D S G Notes: Repetitive rating; pulse width limited by max. junction temperature. Recommended max EAS limit, starting TJ = 25°C, L = 2.05mH, RG = 50, IAS = 24A, VGS =10V. ISD 24A, di/dt 1771A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90°C |
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