SMUN5113T1G datasheet(4/12 Pages) ONSEMI

No. de pieza	SMUN5113T1G

Descripción Electrónicos	Digital Transistors (BRT) R1 = 47 k, R2 = 47 kA

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3

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Table 2. THERMAL CHARACTERISTICS

Characteristic

Unit

Max

Symbol

THERMAL CHARACTERISTICS (SOT−1123) (NSBA144EF3)

Total Device Dissipation

TA = 25°C

(Note 3)

(Note 4)

Derate above 25

°C

(Note 3)

(Note 4)

PD

254

297

2.0

2.4

mW

mW/

°C

Thermal Resistance,

(Note 3)

Junction to Ambient

(Note 4)

RqJA

493

421

°C/W

Thermal Resistance, Junction to Lead

(Note 3)

RqJL

193

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

0.1

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = 5.0 mA, VCE = 10 V)

hFE

80

140

−

Collector−Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

−

0.25

Vdc

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−

1.2

0.8

Vdc

Input Voltage (on)

(VCE = 0.3 V, IC = 2.0 mA)

Vi(on)

3.0

1.6

−

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

32.9

47

61.1

k

W

Resistor Ratio

R1/R2

0.8

1.0

1.2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle

≤ 2%.

Número de pieza similar - SMUN5113T1G

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
ON Semiconductor	SMUN5113T1G	148Kb / 12P	Digital Transistors (BRT) R1 = 47 k, R2 = 47 k September, 2012 ??Rev. 1
ON Semiconductor	SMUN5113T1G	202Kb / 12P	Digital Transistors (BRT) October, 2016 ??Rev. 5

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