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1PS70SB15_15 Datasheet(PDF) 4 Page - NXP Semiconductors |
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1PS70SB15_15 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page NXP Semiconductors 1PS70SB15 Dual Schottky barrier diode 1PS70SB15 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 17 December 2012 4 / 9 006aac829 VF (V) 0.0 1.2 0.8 0.4 1 10 102 103 IF (mA) 10-1 (1) (1) (2) (2) (3) (3) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 1. Forward current as a function of forward voltage; typical values aaa-004515 VR (V) 0 30 20 10 1 10 102 103 IR (µA) 10-1 (1) (2) (3) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 2. Reverse current as a function of reverse voltage; typical values 006aac891 VR (V) 0 30 20 10 4 6 2 8 10 Cd (pF) 0 Tamb = 25 °C; f = 1 MHz Fig. 3. Diode capacitance as a function of reverse voltage; typical values 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. |
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