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BCM857BV Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza BCM857BV
Descripción Electrónicos  PNP/PNP matched double transistors
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
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BCM857BV Datasheet(HTML) 5 Page - NXP Semiconductors

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BCM857BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
5 of 15
NXP Semiconductors
BCM857BV/BS/DS
PNP/PNP matched double transistors
[1]
VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2]
VBE decreases by about 2 mV/K with increasing temperature.
[3]
The smaller of the two values is taken as the numerator.
[4]
The smaller of the two values is subtracted from the larger value.
fT
transition frequency
VCE = −5V;
IC = −10 mA;
f = 100 MHz
100
175
-
MHz
NF
noise figure
VCE = −5V;
IC = −0.2 mA;
RS =2kΩ;
f = 10 Hz to
15.7 kHz
-
1.6
-
dB
VCE = −5V;
IC = −0.2 mA;
RS =2kΩ;
f = 1 kHz;
B = 200 Hz
-
3.1
-
dB
Per device
hFE1/hFE2
hFE matching
VCE = −5V;
IC = −2mA
[3] 0.9
1
-
VBE1−VBE2
VBE matching
VCE = −5V;
IC = −2mA
[4] --
2
mV
Table 8.
Characteristics …continued
Tamb =25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit


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