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IRF5NJ5305 Datasheet(PDF) 1 Page - International Rectifier |
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IRF5NJ5305 Datasheet(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25°C Continuous Drain Current -22* ID @ VGS = -10V, TC = 100°C Continuous Drain Current -16 IDM Pulsed Drain Current ➀ -88 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 160 mJ IAR Avalanche Current ➀ -16 A EAR Repetitive Avalanche Energy ➀ 7.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ 2.8 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temperature 300 (for 5 s) Weight 1.0 (Typical) g oC A 11/10/00 www.irf.com 1 Product Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 Ω -22A* For footnotes refer to the last page HEXFET® POWER MOSFET IRF5NJ5305 SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. * Current is limited by package SMD-0.5 Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight PD - 94033 |
Número de pieza similar - IRF5NJ5305_15 |
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Descripción similar - IRF5NJ5305_15 |
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