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IRFAE50 Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRFAE50
Descripción Electrónicos  Simple Drive Requirements
Download  7 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFAE50 Datasheet(HTML) 2 Page - International Rectifier

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IRFAE50
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
0.83
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
7.1
ISM
Pulse Source Current (Body Diode) ➀
——
2 8
VSD
Diode Forward Voltage
1.8
V
Tj = 25°C, IS =7.1A, VGS = 0V ➃
trr
Reverse Recovery Time
1600
nS
Tj = 25°C, IF =7.1A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
1 3
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
8 00
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.98
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
1.2
VGS = 10V, ID = 4.5A➃
Resistance
1.4
VGS = 10V, ID = 7.1A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
5.9
—S ( )
VDS > 15V, IDS = 4.5A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS=640V ,VGS = 0V
250
VDS = 640V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
8 4
1 9 0
VGS =10V, ID=7.1A
Qgs
Gate-to-Source Charge
6.6
1 5
nC
VDS = 400V
Qgd
Gate-to-Drain (‘Miller’) Charge
4 8
110
td(on)
Turn-On Delay Time
3 2
VDD = 400V, ID = 7.1A,
t r
Rise Time
6 8
RG =2.35Ω
td(off)
Turn-Off Delay Time
7 8
tf
Fall Time
2 4
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
2800
VGS = 0V, VDS = 25V
Coss
Output Capacitance
400
pF
f = 1.0MHz
Crss
Reverse
2 0 0
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)


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