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IRFB3407ZPBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRFB3407ZPBF
Descripción Electrónicos  Battery Management
Download  8 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFB3407ZPBF Datasheet(HTML) 2 Page - International Rectifier

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© 2013 International Rectifier
March 15, 2013
IRFB3407ZPbF
S
D
G
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.050mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
„ ISD ≤ 75A, di/dt ≤ 1570A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.094 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.0
6.4
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
RG(int)
Internal Gate Resistance
–––
0.70
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
320
–––
–––
S
Qg
Total Gate Charge
–––
79
110
Qgs
Gate-to-Source Charge
–––
19
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
24
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
55
–––
td(on)
Turn-On Delay Time
–––
15
–––
tr
Rise Time
–––
64
–––
td(off)
Turn-Off Delay Time
–––
38
–––
tf
Fall Time
–––
65
–––
Ciss
Input Capacitance
–––
4750
–––
Coss
Output Capacitance
–––
420
–––
Crss
Reverse Transfer Capacitance
–––
190
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
–––
440
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
410
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 120™
(Body Diode)
ISM
Pulsed Source Current
–––
–––
488
(Body Diode)
Ãdi
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
33
50
ns
TJ = 25°C
VR = 64V,
–––
39
59
TJ = 125°C
IF = 75A
Qrr
Reverse Recovery Charge
–––
42
63
nC TJ = 25°C
di/dt = 100A/μs
g
–––
56
84
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.2
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 75A
RG = 2.6Ω
VGS = 10V g
VDD = 49V
ID = 75A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 75A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 75A g
VDS = VGS, ID = 150μA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 38V
Conditions
VGS = 10V g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V i
VGS = 0V, VDS = 0V to 60V h
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = -20V
A
ns
pF
nC


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