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BTB1386Q8 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1386Q8 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 4 page  CYStech Electronics Corp. Spec. No. : C815Q8 Issued Date : 2005.06.21 Revised Date : 2005.12.21 Page No. : 1/4 BTB1386Q8 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1386Q8 Features • Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Pb-free package Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V IC -5 Collector Current ICP -10 (Note 1) A Power Dissipation Pd 2.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1 . Single Pulse Pw=10ms BTB1386Q8 SO-8 C：Collector B：Base E：Emitter |
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