CSD16570Q5B_15 datasheet(4/15 Pages) TI

No. de pieza	CSD16570Q5B

Descripción Electrónicos	CSD16570Q5B 25-V N-Channel NexFET Power MOSFET

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Fabricante Electrónico	TI [Texas Instruments]

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GATE

Source

DRAIN

M0137-01

GATE

Source

DRAIN

M0137-02

CSD16570Q5B

SLPS496 – JULY 2014

www.ti.com

Max RθJA = 50°C/W

Max RθJA = 125°C/W

when mounted on

when mounted on a

1 inch2 (6.45 cm2) of

minimum pad area of

2-oz. (0.071-mm thick)

Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

4

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