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CSD18536KCS Datasheet(PDF) 5 Page - Texas Instruments

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No. de Pieza. CSD18536KCS
Descripción  CSD18536KCS 60 V N-Channel NexFET Power MOSFET
Descarga  11 Pages
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Fabricante  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI - Texas Instruments

CSD18536KCS Datasheet(HTML) 5 Page - Texas Instruments

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VSD - Source-to-Drain Voltage (V)
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
10
100
D009
TC = 25°C
TC = 125°C
TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100 125 150 175 200
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
D008
VGS = 4.5 V
VGS = 10 V
TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100 125 150 175 200
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
D006
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
3.5
4
D007
TC = 25°C, I D = 100 A
TC = 125°C, I D = 100 A
Qg - Gate Charge (nC)
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
6
7
8
9
10
D004
VDS - Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
1
10
100
1000
10000
100000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
CSD18536KCS
www.ti.com
SLPS532 – MARCH 2015
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
VDS = 50 V
ID = 100 A
Figure 5. Capacitance
Figure 4. Gate Charge
ID = 250 µA
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Figure 6. Threshold Voltage vs Temperature
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Copyright © 2015, Texas Instruments Incorporated
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