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BUK7K6R8-40E Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK7K6R8-40E Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 13 page BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET 6 November 2013 Product data sheet Scan or click this QR code to view the latest information for this product 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) of greater than 1 V at 175 °C 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - - 40 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 64 W Static characteristics FET1 and FET2 RDSon drain-source on-state resistance VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 12 - 5.8 6.8 mΩ Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 20 A; VDS = 32 V; VGS = 20 V; Tj = 25 °C; Fig. 14; Fig. 15 - 9.1 - nC |
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Descripción similar - BUK7K6R8-40E_15 |
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