BUK9Y3R5-40E_15 datasheet(6/13 Pages) PHILIPS

No. de pieza	BUK9Y3R5-40E

Descripción Electrónicos	N-channel 40 V, 3.8 m logic level MOSFET in LFPAK56

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NXP Semiconductors

BUK9Y3R5-40E

N-channel 40 V, 3.8 mΩ logic level MOSFET in LFPAK56

BUK9Y3R5-40E

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Product data sheet

11 November 2014

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

QGD

gate-drain charge

-

8.6

-

nC

Ciss

input capacitance

-

3852

5137

pF

Coss

output capacitance

-

487

584

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

-

222

304

pF

td(on)

turn-on delay time

-

20.2

-

ns

tr

rise time

-

36.8

-

ns

td(off)

turn-off delay time

-

43.2

-

ns

tf

fall time

VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;

RG(ext) = 5 Ω; Tj = 25 °C

-

29.5

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.82

1.2

V

trr

reverse recovery time

-

26

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 25 V; Tj = 25 °C

-

19.4

-

nC

003aaj084

0

100

200

300

400

0

1

2

3

4

VDS(V)

ID

(A)

VGS(V) = 10

2.6

2.8

3.5

4.5

3

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aaj085

0

2

4

6

8

10

0

2

4

6

8

10

12

VGS (V)

RDSon

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

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BUK9Y3R5-40E Datasheet(PDF) 6 Page - NXP Semiconductors

BUK9Y3R5-40E Datasheet(HTML) 6 Page - NXP Semiconductors

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