BUK9640-100A_15 datasheet(3/13 Pages) PHILIPS

No. de pieza	BUK9640-100A

Descripción Electrónicos	N-channel TrenchMOS logic level FET

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NXP Semiconductors

BUK9640-100A

N-channel TrenchMOS logic level FET

BUK9640-100A

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Product data sheet

13 March 2014

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

158

W

Tmb = 25 °C; VGS = 5 V; Fig. 2; Fig. 3

-

39

A

ID

drain current

Tmb = 100 °C; VGS = 5 V; Fig. 2

-

28

A

IDM

peak drain current

Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3

-

159

A

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Source-drain diode

IS

source current

Tmb = 25 °C

-

39

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

159

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

ID = 39 A; Vsup ≤ 100 V; RGS = 50 Ω;

VGS = 5 V; Tj(init) = 25 °C; unclamped

-

182

mJ

Tmb (°C)

0

200

150

50

100

03na19

40

80

120

Pder

(%)

0

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

03nh74

0

10

20

30

40

25

50

75

100

125

150

175

200

Tmb (°C)

ID

(A)

Fig. 2. Normalized continuous drain current as a

function of mounting base temperature

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