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BF1205 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1205 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 24 page 2003 Sep 30 2 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1205 FEATURES • Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias • Internal switch reduces the number of external components • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio. APPLICATIONS • Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment. DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package. PINNING - SOT363 PIN DESCRIPTION 1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) handbook, halfpage 12 3 654 Top view MGX429 AMP a d (a) s d (b) g1 (a) g2 g1 (b) AMP b Fig.1 Simplified outline and symbol. Marking code: L4-. ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BF1205 − Plastic surface mounted package; 6 leads SOT363 |
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Descripción similar - BF1205_15 |
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