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BF1208 Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1208 Datasheet(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
7 / 22 page 9397 750 14254 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 16 March 2005 7 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. (6) VG2-S = 1.5 V. VDS(A) =5V; VG1-S(B) =VDS(B) =0V; Tj =25 °C. VDS(A) =5V; VG2-S =4V; VDS(B) =5V; VG1-S(B) =0V; Tj =25 °C. ID(B) = internal G1 current = current in pin drain (B) if MOSFET (B) is switched off. Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values Fig 7. Amplifier A: drain current as a function of internal G1 current; typical values ID (mA) 032 24 816 001aaa556 20 10 30 40 yfs (mS) 0 (1) (2) (3) (4) (5) (6) 001aac206 ID(B) (µA) 060 40 20 8 12 4 16 20 ID(A) (mA) 0 |
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