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CSD87588N Datasheet(PDF) 4 Page - Texas Instruments |
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CSD87588N Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 23 page  CSD87588N SLPS384D – MARCH 2013 – REVISED APRIL 2015 www.ti.com 5.4 Power Block Performance TA = 25°C (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT VIN = 12 V, VGS = 5 V VOUT = 1.3 V, IOUT = 15 A PLOSS Power Loss(1) 2.1 W ƒSW = 500 kHz LOUT = 0.29 µH, TJ = 25ºC TG to TGR = 0 V IQVIN VIN Quiescent Current 10 µA BG to PGND = 0 V (1) Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and using a high current 5 V driver IC. 5.5 Electrical Characteristics TA = 25°C (unless otherwise stated) Q1 FET Q2 FET PARAMETER TEST CONDITIONS UNIT MIN TYP MAX MIN TYP MAX STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = 250 μA 30 30 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 24 V 1 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 100 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = 250 μA 1.1 1.9 1.1 1.9 V VGS = 4.5 V, IDS = 15 A 10.4 12.5 3.5 4.2 RDS(on) Drain-to-Source On Resistance m Ω VGS = 10 V, IDS = 15 A 8 9.6 2.9 3.5 gƒs Transconductance VDS = 10 V, IDS = 15 A 43 93 S DYNAMIC CHARACTERISTICS CISS Input Capacitance (1) 566 736 2310 3000 pF VGS = 0 V, VDS = 15 V, COSS Output Capacitance (1) 341 444 682 887 pF ƒ = 1 MHz CRSS Reverse Transfer Capacitance (1) 10.3 13.4 62 80.4 pF RG Series Gate Resistance (1) 1.2 2.4 1.1 2.2 Ω Qg Gate Charge Total (4.5 V) (1) 3.2 4.1 13.7 17.9 nC Qgd Gate Charge - Gate-to-Drain 0.7 4.3 nC VDS = 15 V, IDS = 15 A Qgs Gate Charge - Gate-to-Source 1.4 4.3 nC Qg(th) Gate Charge at Vth 0.8 2.8 nC QOSS Output Charge VDD = 12 V, VGS = 0 V 7 18.6 nC td(on) Turn On Delay Time 7.3 12.1 ns tr Rise Time 31.6 36.7 ns VDS = 15 V, VGS = 4.5 V, IDS = 15 A, RG = 2 Ω td(off) Turn Off Delay Time 10.2 20.1 ns tƒ Fall Time 5.0 6.3 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage IDS = 15 A, VGS = 0 V 0.85 0.78 V Qrr Reverse Recovery Charge 12.5 26.7 nC Vdd = 15 V, IF = 15 A, di/dt = 300 A/ μs trr Reverse Recovery Time 16 23 ns (1) Specified by design 4 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated |
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