CSD95373AQ5M_15 datasheet(9/26 Pages) TI

No. de pieza	CSD95373AQ5M

Descripción Electrónicos	CSD95373AQ5M Synchronous Buck NexFET??Power Stage

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Fabricante Electrónico	TI [Texas Instruments]

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−

+

−

POR

VDD (5)

BOOT (9)

HG

SW

GND

LG

PWM (12)

Gate Driver Logic

ZX

Tri-State Logic

PWMH

PWML

PWMT

Temperature Sense

NC (1)

TAO (11)

BOOT_R (8)

VIN (7)

VSW (6)

PGND (13)

Thermal Shutdown

ENABLE (3)

FCCM (10)

Fault Detection

3V LDO

NC (2)

NC (4)

CSD95373AQ5M

www.ti.com

SLPS458A – DECEMBER 2013 – REVISED AUGUST 2014

7 Detailed Description

7.1 Functional Block Diagram

7.2 Feature Description

7.2.1 Powering CSD95373AQ5M And Gate Drivers

An external VDD voltage is required to supply the integrated gate driver IC and provide the necessary gate drive

power for the MOSFETs. The gate driver IC is capable of supplying in excess of 4 A peak current into the

MOSFET gates to achieve fast switching. A 1 µF 10 V X5R or higher ceramic capacitor is recommended to

bypass VDD pin to PGND. A bootstrap circuit to provide gate drive power for the Control FET is also included. The

bootstrap supply to drive the Control FET is generated by connecting a 100 nF 16 V X5R ceramic capacitor

between BOOT and BOOT_R pins. An optional RBOOT resistor can be used to slow down the turn on speed of

the Control FET and reduce voltage spikes on the VSW node. A typical 1 to 4.7 Ω value is a compromise between

switching loss and VSW spike amplitude.

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