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CSD97395Q4M Datasheet(PDF) 11 Page - Texas Instruments

No. de pieza CSD97395Q4M
Descripción Electrónicos  CSD97395Q4M Synchronous Buck NexFET??Power Stage
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD97395Q4M Datasheet(HTML) 11 Page - Texas Instruments

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Switching Frequency (kHz)
200
600
1000
1400
1800
2200
0
4
8
12
16
20
24
28
32
36
40
44
D010
Junction Temperature (GC)
-75
-50
-25
0
25
50
75
100
125
150
8.5
9
9.5
10
10.5
11
D011
Output Voltage (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
0.6
-7.2
0.7
-5.4
0.8
-3.6
0.9
-1.8
1
0.0
1.1
1.8
1.2
3.6
1.3
5.4
1.4
7.2
1.5
9.0
D008
Output Inductance (nH)
0
100
200
300
400
500
600
700
800
900 1000 1100
0.9
-1.8
0.95
-0.9
1
0.0
1.05
0.9
1.1
1.8
1.15
2.7
1.2
3.5
1.25
4.4
D009
CSD97395Q4M
www.ti.com
SLPS541A – DECEMBER 2014 – REVISED MARCH 2015
Typical Application (continued)
TJ = 125°C, unless stated otherwise.
VIN = 12 V
VDD = 5 V
IOUT = 25 A
VIN = 12 V
VDD = 5 V
IOUT = 25 A
ƒSW = 500 kHz
LOUT = 0.29 µH
ƒSW = 500 kHz
VOUT = 1.8 V
Figure 10. Normalized Power Loss vs Output Voltage
Figure 11. Normalized Power Loss vs Output Inductance
VIN = 12 V
VDD = 5 V
IOUT = 25 A
VIN = 12 V
VDD = 5 V
VOUT = 1.8 V
LOUT = 0.29 µH
VOUT = 1.8 V
IOUT = 25 A
LOUT = 0.29 µH
Figure 12. Driver Current vs Frequency
Figure 13. Driver Current vs Temperature
1. The Typical CSD97395Q4M System Characteristic curves are based on measurements made on a PCB
design with dimensions of 4.0" (W) × 3.5" (L) × 0.062" (T) and 6 copper layers of 1 oz. copper thickness. See
System Example for detailed explanation.
8.3 System Example
8.3.1 Power Loss Curves
MOSFET centric parameters such as RDS(ON) and Qgd are primarily needed by engineers to estimate the loss
generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has
provided measured power loss performance curves. Figure 4 plots the power loss of the CSD97395Q4M as a
function of load current. This curve is measured by configuring and running the CSD97395Q4M as it would be in
the final application (see Figure 14). The measured power loss is the CSD97395Q4M device power loss which
consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve.
Power Loss = (VIN x IIN) + (VDD x IDD) – (VSW_AVG x IOUT)
(1)
The power loss curve in Figure 4 is measured at the maximum recommended junction temperature of
TJ = 125°C under isothermal test conditions.
Copyright © 2014–2015, Texas Instruments Incorporated
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