BUK7Y22-100E_15 datasheet(1/13 Pages) PHILIPS

No. de pieza	BUK7Y22-100E

Descripción Electrónicos	N-channel 100 V, 22 m廓 standard level MOSFET in LFPAK56

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BUK7Y22-100E

N-channel 100 V, 22 mΩ standard level MOSFET in LFPAK56

8 May 2013

Product data sheet

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1. General description

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using

TrenchMOS technology. This product has been designed and qualified to AEC Q101

standard for use in high performance automotive applications.

2. Features and benefits

• Q101 compliant

• Repetitive avalanche rated

• Suitable for thermally demanding environments due to 175 °C rating

• True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

3. Applications

• 12 V, 24 V and 48 V Automotive systems

• Motors, lamps and solenoid control

• Transmission control

• Ultra high performance power switching

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 1

-

49

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 2

-

147

W

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 15 A; Tj = 25 °C;

Fig. 11

-

14.2

22

mΩ

Dynamic characteristics

QGD

gate-drain charge

VGS = 10 V; ID = 15 A; VDS = 80 V;

Tj = 25 °C; Fig. 13; Fig. 14

-

17

-

nC

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BUK7Y22-100E Datasheet(PDF) 1 Page - NXP Semiconductors

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