Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

BUK9Y43-60E Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza BUK9Y43-60E
Descripción Electrónicos  N-channel 60 V, 43 m廓 logic level MOSFET in LFPAK56
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK9Y43-60E Datasheet(HTML) 5 Page - NXP Semiconductors

  BUK9Y43-60E_15 Datasheet HTML 1Page - NXP Semiconductors BUK9Y43-60E_15 Datasheet HTML 2Page - NXP Semiconductors BUK9Y43-60E_15 Datasheet HTML 3Page - NXP Semiconductors BUK9Y43-60E_15 Datasheet HTML 4Page - NXP Semiconductors BUK9Y43-60E_15 Datasheet HTML 5Page - NXP Semiconductors BUK9Y43-60E_15 Datasheet HTML 6Page - NXP Semiconductors BUK9Y43-60E_15 Datasheet HTML 7Page - NXP Semiconductors BUK9Y43-60E_15 Datasheet HTML 8Page - NXP Semiconductors BUK9Y43-60E_15 Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 13 page
background image
NXP Semiconductors
BUK9Y43-60E
N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56
BUK9Y43-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
8 May 2013
5 / 13
003aaj113
10-6
10-5
10-4
10-3
10-2
10-1
1
10-2
10-1
1
10
tp (s)
Zth(j-mb)
Zth(j-mb)
(K/W)
(K/W)
P
t
tp
T
tp
δ = T
single shot
single shot
δ = 0.5
δ = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
54
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 9; Fig. 10
1.4
1.7
2.1
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
-
-
2.45
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
0.5
-
-
V
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
0.01
1
µA
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
IGSS
gate leakage current
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11
-
35.8
43
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11
-
31
38
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 5 A; Tj = 175 °C;
Fig. 12; Fig. 11
-
-
97.2
Dynamic characteristics
QG(tot)
total gate charge
-
8.2
-
nC
QGS
gate-source charge
-
1.6
-
nC
QGD
gate-drain charge
ID = 5 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
3.4
-
nC


Número de pieza similar - BUK9Y43-60E_15

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
NXP Semiconductors
BUK9Y43-60E NXP-BUK9Y43-60E Datasheet
351Kb / 13P
   N-channel 60 V, 43 m廓 logic level MOSFET in LFPAK56
20 February 2013
logo
Nexperia B.V. All right...
BUK9Y43-60E NEXPERIA-BUK9Y43-60E Datasheet
764Kb / 13P
   N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56
8 May 2013
More results

Descripción similar - BUK9Y43-60E_15

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
NXP Semiconductors
BUK9Y43-60E NXP-BUK9Y43-60E Datasheet
351Kb / 13P
   N-channel 60 V, 43 m廓 logic level MOSFET in LFPAK56
20 February 2013
BUK7Y43-60E NXP-BUK7Y43-60E Datasheet
294Kb / 13P
   N-channel 60 V, 43 m廓 standard level MOSFET in LFPAK56
20 February 2013
BUK7Y43-60E PHILIPS-BUK7Y43-60E_15 Datasheet
303Kb / 13P
   N-channel 60 V, 43 m廓 standard level MOSFET in LFPAK56
7 May 2013
BUK9Y6R0-60E PHILIPS-BUK9Y6R0-60E_15 Datasheet
307Kb / 13P
   N-channel 60 V, 6.0 m廓 logic level MOSFET in LFPAK56
8 May 2013
BUK9Y25-60E PHILIPS-BUK9Y25-60E_15 Datasheet
317Kb / 13P
   N-channel 60 V, 25 m廓 logic level MOSFET in LFPAK56
7 May 2013
BUK9Y8R7-60E NXP-BUK9Y8R7-60E Datasheet
352Kb / 13P
   N-channel 60 V, 8.7 m廓 logic level MOSFET in LFPAK56
20 February 2013
logo
Nexperia B.V. All right...
BUK9Y43-60E NEXPERIA-BUK9Y43-60E Datasheet
764Kb / 13P
   N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56
8 May 2013
logo
NXP Semiconductors
BUK9Y59-60E NXP-BUK9Y59-60E Datasheet
322Kb / 13P
   N-channel 60 V, 59 m廓 logic level MOSFET in LFPAK56
20 February 2013
BUK9Y4R8-60E NXP-BUK9Y4R8-60E Datasheet
298Kb / 13P
   N-channel 60 V, 4.8 m廓 logic level MOSFET in LFPAK56
20 February 2013
BUK9Y6R0-60E NXP-BUK9Y6R0-60E Datasheet
299Kb / 13P
   N-channel 60 V, 6.0 m廓 logic level MOSFET in LFPAK56
20 February 2013
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com