BUK763R9-60E_15 datasheet(6/12 Pages) PHILIPS

No. de pieza	BUK763R9-60E

Descripción Electrónicos	N-channel TrenchMOS standard level FET

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NXP Semiconductors

BUK763R9-60E

N-channel TrenchMOS standard level FET

BUK763R9-60E

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Product data sheet

13 July 2012

6 / 12

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

VSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.8

1.2

V

trr

reverse recovery time

-

39

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 25 V

-

51

-

nC

003aah394

0

120

240

360

0

1

2

3

4

VDS(V)

ID

(A)

VGS(V) = 4.5

5

6

8

10

5.5

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aah395

0

5

10

15

0

5

10

15

20

VGS(V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aah397

0

100

200

300

400

0

2

4

6

8

VGS(V)

ID

(A)

Tj = 25 °C

Tj = 175 °C

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah027

0

1

2

3

4

5

-60

0

60

120

180

Tj (°C)

VGS(th)

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

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BUK763R9-60E Datasheet(PDF) 6 Page - NXP Semiconductors

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