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BUK962R5-60E Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK962R5-60E Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page BUK962R5-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 16 May 2012 5 of 14 NXP Semiconductors BUK962R5-60E N-channel TrenchMOS logic level FET 6. Thermal characteristics Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aag345 10 -1 1 10 10 2 10 3 10 4 10 -1 1 10 10 2 10 3 VDS (V) ID (A) Limit RDSon = VDS / ID DC 100 μs 10 ms tp =10 μ s 100 ms 1 ms Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 --0.42 K/W Rth(j-a) thermal resistance from junction to ambient minimum footprint; mounted on a printed-circuit board -50 -K/W Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. 003aaf570 single shot 0.2 0.1 0.05 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 tp (s) Zth(j-mb) (K/W) = 0.5 0.02 tp T P t tp T |
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