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BUK963R3-60E Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK963R3-60E Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page NXP Semiconductors BUK963R3-60E N-channel TrenchMOS logic level FET BUK963R3-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 July 2012 8 / 12 003aah582 0 2 4 6 8 10 0 60 120 180 QG(nC) VGS (V) VDS= 48V 14 V Fig. 14. Gate-source voltage as a function of gate charge; typical values 003aah583 102 103 104 105 10-1 1 10 102 VDS(V) C (pF) Ciss Crss Coss Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aah539 0 100 200 300 400 0 0.5 1 1.5 VSD(V) IS (A) Tj = 25 °C Tj = 175°C Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values |
Número de pieza similar - BUK963R3-60E_15 |
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Descripción similar - BUK963R3-60E_15 |
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