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1N3673AR Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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1N3673AR Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 800 V - 1000 V IF = 12 A Features • High Surge Capability DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage VRRM V RMS reverse voltage VRMS V DC blocking voltage VDC V 1N3673A (R) • Types from 800 V to 1000 V VRRM 1N3671A (R) 800 560 800 1000 700 1000 2. Reverse polarity (R): Stud is anode. 1N3671A thru 1N3673AR Maximum ratings, at Tj = 25 °C, unless otherwise specified Silicon Standard Recovery Diode Conditions DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W -55 to 150 1N3671A (R) 1N3673A (R) 1.1 1.1 -55 to 150 -55 to 150 A 800 12 240 1000 12 240 IR VF VR = 50 V, Tj = 25 °C IF = 12 A, Tj = 25 °C TC ≤ 150 °C Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified TC = 25 °C, tp = 8.3 ms Surge non-repetitive forward current, Half Sine Wave IF,SM -55 to 150 Reverse current VR = 50 V, Tj = 175 °C V 10 15 10 15 2.00 2.00 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 |
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