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BUK7Y18-55B Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK7Y18-55B Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK7Y18-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 April 2010 8 of 14 NXP Semiconductors BUK7Y18-55B N-channel TrenchMOS standard level FET Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 13. Drain-source on-state resistance as a function of gate-source voltage; typical values. Tj (°C) −60 180 120 060 03aa32 2 3 1 4 5 VGS(th) (V) 0 max typ min 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max Tj (°C) −60 180 120 060 03nb25 0.8 1.6 2.4 a 0 003aac948 0 20 40 60 04 8 12 16 20 VGS (V) RDSON (m Ω) |
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