2N7002KDW-AU datasheet(2/7 Pages) PANJIT

No. de pieza	2N7002KDW-AU

Descripción Electrónicos	60V N-Channel Enhancement Mode MOSFET - ESD Protected

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Fabricante Electrónico	PANJIT [Pan Jit International Inc.]

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PAGE . 2

May 13,2015-REV.03

2N7002KDW-AU

ELECTRICALCHARACTERISTICS

VDD

VOUT

VIN

RG

RL

Switching

Test Circuit

Gate Charge

Test Circuit

VDD

VGS

RG

RL

1mA

P ara meter

S ymbo l

Test C o ndi ti on

Mi n.

Typ.

Max.

Uni ts

Static

D rai n-S ource B rea kd own

Voltage

BV

DS S

V

GS =0 V , I D = 10uA

60

-

V

Gate Thresho ld Voltage

V

GS (th)

V

DS =V GS , ID = 250uA

1

-

2.5

V

D rai n-S ource O n-S tate

Resi sta nce

R

DS (on)

V

GS=4.5V, I D=200mA

-

4.0

Ω

D rai n-S ource O n-S tate

Resi sta nce

R

DS (on)

V

GS=10V, I D=500mA

-

3.0

Zero Gate Voltag e D ra i n

Curre nt

I

DS S

V

DS=60V, VGS=0V

--1

uA

Gate Body Leakage

I

GS S

V

GS =+ 20 V, V DS =0 V

-

+10

uA

Forward Transconductance

g

fS

V

DS = 15V , ID =2 5 0 mA

10 0

-

mS

Dynamic

Total G ate C harge

Q

g

V

DS = 15V , ID =2 0 0 mA

V

GS=4.5V

--

0.8

nC

Turn-On D ela y Ti me

t

on

V

DD=30V , RL=150Ω

I

D=200mA , VGEN=10V

R

G=10Ω

--

20

ns

Turn-Off D elay Ti me

t

off

--

40

Inp ut C apa ci tance

C

iss

V

DS =2 5 V , V GS =0 V

f=1.0MH

Z

--

35

pF

Output C apa ci tance

C

oss

--

10

Reverse Transfer

C apaci tance

C

rss

--

5

S ource-D rai n D i od e

D i ode F orward Vo ltage

V

SD

I

S = 2 00m A , V GS = 0V

-

0.82

1.3

V

C onti nuous D i ode F orward

Curre nt

I

s

--

-

115

mA

P ulsed D i ode F orward

Curre nt

I

sM

--

-

800

mA

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Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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2N7002KDW-AU Datasheet(PDF) 2 Page - Pan Jit International Inc.

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Número de pieza similar - 2N7002KDW-AU

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