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BUK7606-75B Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza BUK7606-75B
Descripción Electrónicos  N-channel TrenchMOS standard level FET
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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BUK7606-75B Datasheet(HTML) 4 Page - NXP Semiconductors

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BUK7606-75B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 3 February 2011
4 of 13
NXP Semiconductors
BUK7606-75B
N-channel TrenchMOS standard level FET
5.
Thermal characteristics
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03ng87
1
10
102
103
10−1
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
tp = 10 μs
100
μs
Capped at 75 A due to package
Limit RDSon = VDS/ID
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from
junction to mounting base
see Figure 4
--0.5
K/W
Rth(j-a)
thermal resistance from
junction to ambient
mounted on a printed-circuit board;
minimum footprint
-50
-K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
03ng88
single shot
0.2
0.1
0.05
0.02
10−3
10−2
10−1
1
10−6
10−5
10−4
10−3
10−2
10−1
1
tp (s)
Zth(j-mb)
(K/W)
δ = 0.5
tp
tp
T
P
t
T
δ =


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