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BUK7107-55ATE Datasheet(PDF) 6 Page - NXP Semiconductors

No. de pieza BUK7107-55ATE
Descripción Electrónicos  N-channel TrenchPLUS standard level FET
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7107-55ATE Datasheet(HTML) 6 Page - NXP Semiconductors

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BUK7107-55ATE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
6 of 15
NXP Semiconductors
BUK7107-55ATE
N-channel TrenchPLUS standard level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID =0.25mA; VGS =0V; Tj =25°C
55
-
-
V
ID =0.25mA; VGS =0V; Tj =-55 °C
50
-
-
V
VGS(th)
gate-source threshold
voltage
ID =1mA; VDS = VGS; Tj =25°C;
see Figure 9
234
V
ID =1mA; VDS = VGS; Tj = 175 °C;
see Figure 9
1-
-
V
ID =1mA; VDS = VGS; Tj =-55 °C;
see Figure 9
--4.4
V
IDSS
drain leakage current
VDS =55V; VGS =0V; Tj =25°C
-
0.1
10
µA
VDS =55V; VGS =0V; Tj = 175 °C
-
-
250
µA
V(BR)GSS
gate-source breakdown
voltage
IG = 1 mA; -55 °C < Tj < 175 °C
20
22
-
V
IG =-1mA; -55 °C < Tj < 175 °C
20
22
-
V
IGSS
gate leakage current
VDS =0V; VGS =10V; Tj = 25 °C
-
22
1000
nA
VDS =0V; VGS =-10 V; Tj = 25 °C
-
22
1000
nA
VDS =0V; VGS =10V; Tj = 175 °C
--10
µA
VDS =0V; VGS =-10 V; Tj = 175 °C
--10
µA
RDSon
drain-source on-state
resistance
VGS =10V; ID =50A; Tj =25°C;
see Figure 7; see Figure 8
-5.8
7
m
VGS =10V; ID =50A; Tj = 175 °C;
see Figure 7; see Figure 8
--14
m
VF(TSD)
temperature sense
diode forward voltage
IF = 250 µA; Tj = 25 °C
648
658
668
mV
SF(TSD)
temperature sense
diode temperature
coefficient
IF = 250 µA; Tj < 175 °C; Tj > -55 °C
-1.4
-1.54
-1.68
mV/K
VF(TSD)hys
temperature sense
diode forward voltage
hysteresis
125 µA < IF < 250 µA; Tj =25°C
25
32
50
mV
Dynamic characteristics
QG(tot)
total gate charge
ID =25A; VDS =44V; VGS =10V;
see Figure 14
-116
-
nC
QGS
gate-source charge
-
19
-
nC
QGD
gate-drain charge
-
50
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V; f=1MHz;
Tj =25°C; see Figure 12
-
4500
-
pF
Coss
output capacitance
-
960
-
pF
Crss
reverse transfer
capacitance
-
510
-
pF
td(on)
turn-on delay time
VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) 10 Ω
-36
-
ns
tr
rise time
-
115
-
ns
td(off)
turn-off delay time
-
159
-
ns
tf
fall time
-
111
-
ns


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