BUK9512-55B

N-channel TrenchMOS logic level FET

Rev. 02 — 8 June 2010

Product data sheet

1.

Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

on-state resistance

sources

environments due to 175 °C rating

1.3 Applications

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source

voltage

--55

V

drain current

see Figure 3; see Figure 1

[1]

--75

A

total power

dissipation

--157

W

Static characteristics

drain-source

on-state

resistance

-9

10

m

Ω

see Figure 11; see Figure 12

-10.2

12

m

Ω