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BUK9508-55B Datasheet(PDF) 9 Page - NXP Semiconductors |
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BUK9508-55B Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page BUK9508-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 15 June 2010 9 of 14 NXP Semiconductors BUK9508-55B N-channel TrenchMOS logic level FET Fig 13. Gate-source voltage as a function of gate charge; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 15. Source current as a function of source-drain voltage; typical values 03nn48 0 1 2 3 4 5 0 1020 3040 50 Q G (nC) V GS (V) VDD = 44 V VDD = 14 V 03nn54 0 2000 4000 6000 10−2 10−1 1 10 102 VDS (V) C (pF) Ciss Coss Crss 03nn47 0 25 50 75 100 0.0 0.5 1.0 1.5 VSD (V) IS (A) Tj = 175 °C T j = 25 °C |
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