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BUK9506-75B Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK9506-75B Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page BUK9506-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 — 7 February 2011 8 of 13 NXP Semiconductors BUK9506-75B N-channel TrenchMOS logic level FET Fig 13. Gate-source voltage as a function of turn-on gate charge; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 15. Reverse diode current as a function of reverse diode voltage; typical values 03ng80 0 1 2 3 4 5 0 20 40 60 80 100 QG (nC) VGS (V) VDD = 14 V VDD = 60 V 03ng86 0 2000 4000 6000 8000 10000 12000 14000 10−1 1 10 102 VDS (V) C (pF) Ciss Coss Crss 03ng79 0 20 40 60 80 100 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) IS (A) Tj = 175 °C Tj = 25 °C |
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Descripción similar - BUK9506-75B_15 |
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