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MCP450SB Datasheet(PDF) 5 Page - Microchip Technology |
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MCP450SB Datasheet(HTML) 5 Page - Microchip Technology |
5 / 50 page 2003 Microchip Technology Inc. DS40232H-page 5 MCRF450/451/452/455 2.0 ELECTRICAL CHARACTERISTICS TABLE 2-1: ABSOLUTE RATINGS TABLE 2-2: OPERATING DC CHARACTERISTICS Parameters Symbol Min Max Units Conditions Coil current into coil pad IPP_AC — 40 mA Peak-to-Peak coil current Maximum power dissipation P MPD —0.5 W — Ambient temperature with power applied T AMB -40 +125 °C — Assembly temperature T ASM — 300 °C < 10 sec. Storage temperature T STORE -65 150 °C — Note: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Standard Operating Conditions (unless otherwise stated) Operating Temperature = -20°C to +70°C Parameters Symbol Min Typ Max Units Conditions Reading voltage V DDR 2.8 — — V V DD voltage for reading at 25°C Operating current in Normal mode I OPER_N —20 — µAVDD = 2.8V during reading at 25°C Operating current in Fast mode I OPER_F —45 — µAVDD = 2.8V during reading at 25°C Writing current I WRITE — 130 — µA At 25°C, V DD = 2.8V Writing voltage V WRITE 2.8 — — V DC At 25 °C Modulation resistance R M —3.0 5.0 Ω DC turn-on resistance between Drain and Source terminals of the modulation transistor at V DD = 2.8V Data retention — 200 — — Years For T < 120°C Endurance — 1.0 — — Million Cycles At 25°C |
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