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MCP452SB Datasheet(PDF) 7 Page - Microchip Technology |
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MCP452SB Datasheet(HTML) 7 Page - Microchip Technology |
7 / 50 page 2003 Microchip Technology Inc. DS40232H-page 7 MCRF450/451/452/455 TABLE 2-4: PAD COORDINATES (MICRONS) TABLE 2-5: DIE MECHANICAL DIMENSIONS TABLE 2-6: WAFER MECHANICAL SPECIFICATIONS Pad Name Lower Upper Passivation Openings Pad Center X Pad Center Y Left X Left Y Right X Right Y Pad Width Pad Height Ant. Pad A -853.50 -992.10 -764.50 -903.10 89.00 89.00 -809.00 -947.60 Ant. Pad B 759.50 -993.70 848.50 -904.70 89.00 89.00 804.00 -949.20 V SS 769.10 977.90 858.10 1066.90 89.00 89.00 813.60 1022.40 V DD -839.50 45.50 -750.50 134.50 89.00 89.00 -795.00 90.00 CLK 721.10 77.80 810.10 166.80 89.00 89.00 765.60 122.30 F CLK -821.50 910.70 -732.50 999.70 89.00 89.00 -777.00 955.20 Note 1: All coordinates are referenced from the center of the die. Specifications Min Typ Max Unit Comments Bond pad opening — — 3.5 x 3.5 89 x 89 — — mil µm Note 1, Note 2 Die backgrind thickness 7.5 190.5 8 203.2 8.5 215.9 mil µm Sawed 8” wafer on frame (option = WF) (Note 3) 10 254 11 279.4 12 304.8 mil µm • Bumped, sawed 8” wafer on frame (option = WFB) • Unsawed wafer (option = W) • Unsawed 8” bumped wafer (option = WB), (Note 3) Die passivation thickness (multilayer) — 1.3 — µm Note 4 Die Size: Die size X*Y before saw (step size) Die size X*Y after saw — — 1904 x 2340.8 1840.5 x 2277.3 — — µm µm — — Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at least 0.1 mil. 2: Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu. 3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as thick as the application will allow. 4: The Die Passivation Thickness (1.3 µm) can vary by device depending on the mask set used. The passivation is formed by: - Layer 1: Oxide (undoped oxide) - Layer 2: PSG (doped oxide) - Layer 3: Oxynitride (top layer) 5: The conversion rate is 25.4 µm/mil. Notice: Extreme care is urged in the handling and assembly of die products since they are susceptible to mechanical and electrostatic damage. Specifications Min Typ Max Unit Comments Wafer Diameter — 8 — inch Die separation line width — 80 — µm Dice per wafer — 6,600 — die Batch size — 24 — wafer |
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Descripción similar - MCP452SB |
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