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6N10 Datasheet(PDF) 4 Page - Unisonic Technologies |
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6N10 Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 4 page 6N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 4 www.unisonic.com.tw QW-R502-486.E TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, BVDSS (V) 0 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) 1.5 2.5 0.5 2 0 50 100 150 200 250 300 020 80 120 60 0 50 100 150 200 250 300 40 100 1 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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Descripción similar - 6N10_15 |
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