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1N65L-TM3-T Datasheet(PDF) 1 Page - Unisonic Technologies |
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1N65L-TM3-T Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 7 page UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-579.E 1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) <12.5Ω @ VGS=10V, ID=0.6A * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL TO-252 TO-220 1 1 TO-220F SOT-223 1 1 TO-92 TO-126 1 DFN-8(5x6) 1 TO-251 1 1 TO-251L 1 |
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