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2N60-E Datasheet(PDF) 3 Page - Unisonic Technologies |
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2N60-E Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 7 page 2N60-E Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R502-974.C ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Drain Current Continuous ID 2.0 A Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 100 mJ Power Dissipation ( TC = 25°С) SOT-223 PD 1 W TO-220/ TO-262 54 W TO-220F/TO-220F1 23 W TO-251/TO-251L TO-252/TO-251S TO-251S2/TO-251S4 44 W TO-126/TO-126C 40 W DFN-8(5×6) 22 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=50mH, IAS=2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT Junction to Ambient SOT-223 θJA 150 °С/W TO-220/ TO-262 TO-220F/TO-220F1 62.5 °С/W TO-251/TO-251L TO-252/TO-251S TO-251S2/TO-251S4 100 °С/W TO-126/TO-126C 89 °С/W DFN-8(5×6) 75 (Note) °С/W Junction to Case SOT-223 θJC 14 °С/W TO-220/ TO-262 2.32 °С/W TO-220F/TO-220F1 5.5 °С/W TO-251/TO-251L TO-252/TO-251S TO-251S2/TO-251S4 2.87 °С/W TO-126/TO-126C 3.12 °С/W DFN-8(5×6) 5.6 (Note) °С/W Note: Note: The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. |
Número de pieza similar - 2N60-E |
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Descripción similar - 2N60-E |
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