2N70KL-TN3-R datasheet(2/6 Pages) UTC

No. de pieza	2N70KL-TN3-R

Descripción Electrónicos	N-CHANNEL JUNCTIN SILICON FET

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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2 / 6 page

2N70K

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-930.B

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

2.0

A

Drain Current

Continuous

ID

2.0

A

Pulsed (Note 2)

IDM

8.0

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

20

mJ

Repetitive (Note 2)

EAR

2.8

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220F2

PD

40

W

TO-252

30

Junction Temperature

TJ

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ.

3. L=10mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F2

θJA

62.5

°С/W

TO-252

110

Junction to Case

TO-220F2

θJC

3.13

°С/W

TO-252

4.24

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