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1N60G-TM3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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1N60G-TM3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 1N60-KW Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-054.D ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 10 μA Forward VGS=30V, VDS=0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS △ /TJ ID=250μA 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.5A 12 15 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 150 pF Output Capacitance COSS 17.5 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1MHz 4.6 pF SWITCHING CHARACTERISTICS Total Gate Charge QG 8 nC Gate-Source Charge QGS 1.8 nC Gate-Drain Charge QGD VDS=50V, ID=1.3A, RG=3.3kΩ VGS=10V, (Note 2,3) 1.3 nC Turn-On Delay Time tD(ON) 15 ns Turn-On Rise Time tR 30 ns Turn-Off Delay Time tD(OFF) 26 ns Turn-Off Fall Time tF VDD=30V, ID=1A, RG=25Ω, VGS=10V (Note 2,3) 35 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS =1A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 1.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 4.0 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 3. Essentially Independent of Operating Temperature |
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