1N60G-TM3-T datasheet(4/7 Pages) UTC

No. de pieza	1N60G-TM3-T

Descripción Electrónicos	N-CHANNEL ENHANCEMENT

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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4 / 7 page

1N60-KW

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-054.D



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

600

V

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

10

μA

Forward

VGS=30V, VDS=0V

100

nA

Gate-Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100

nA

Breakdown Voltage Temperature Coefficient △BVDSS △

/TJ ID=250μA

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=0.5A

12

15

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

150

pF

Output Capacitance

COSS

17.5

pF

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1MHz

4.6

pF

SWITCHING CHARACTERISTICS

Total Gate Charge

QG

8

nC

Gate-Source Charge

QGS

1.8

nC

Gate-Drain Charge

QGD

VDS=50V, ID=1.3A, RG=3.3kΩ

VGS=10V, (Note 2,3)

1.3

nC

Turn-On Delay Time

tD(ON)

15

ns

Turn-On Rise Time

tR

30

ns

Turn-Off Delay Time

tD(OFF)

26

ns

Turn-Off Fall Time

tF

VDD=30V, ID=1A, RG=25Ω,

VGS=10V (Note 2,3)

35

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS =1A

1.4

V

Maximum Continuous Drain-Source Diode

Forward Current

IS

1.0

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

4.0

A

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

3. Essentially Independent of Operating Temperature

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