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BTB25L-6-B-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza BTB25L-6-B-TA3-T
Descripción Electrónicos  25A TRIACS
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
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BTB25L-6-B-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies

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BTB25
Preliminary
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R220-026.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current (Full Sine Wave) TC=75°C
IT(RMS)
25
A
F=50 Hz
t=20ms
250
A
Non Repetitive Surge Peak
On-State Current (Full
Cycle, TJ initial=25°C)
F=60 Hz
t=16.7ms
ITSM
260
A
I
2t Value for Fusing
tP=10ms
I
2t
340
A
2s
Critical Rate of Rise of
On-State Current IG=2xIGT,
tr≤100ns
F=120 Hz TJ=125°C
dI/dt
50
A/µs
Non Repetitive Surge Peak
Off-State Voltage
tP=10ms
TJ=25°C
VDSM/VRSM
VDRM/VRRM+100
V
Peak Gate Current
tP=20µs
TJ=125°C
IGM
4
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case (AC)
θJC
0.8
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified)
FOR STANDARD TYPE (4 QUADRANTS)
B
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
I-II-III
50
mA
Gate Trigger Current (Note 1)
IGT
IV
100
mA
Gate Trigger Voltage
VGT
VD=12V, RL=33Ω
ALL
1.3
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ, TJ=125°C ALL
0.2
V
Holding Current Note 2)
IH
IT=500mA
80
mA
I-III-IV
70
mA
Latching Current
IL
IG=1.2 IGT
II
160
mA
Critical Rate of Rise of Off-State
Voltage (Note 2)
dV/dt
VD=67%VDRM, Gate Open, TJ=125°C
500
V/µs
Critical Rate of Rise of Off-State
Voltage at Commutation(Note 2)
(dV/dt)c
(dI/dt)c=13.3A/ms, TJ= 125°C
10
V/µs
STATIC CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Peak On-State Voltage (Note 2)
VTM
ITM=35A, tP=380μs
TJ=25°C
1.55
V
Threshold Voltage (Note 2)
VTO
TJ=125°C
0.85
V
Dynamic Resistance (Note 2)
RD
TJ=125°C
16
mΩ
IDRM
TJ=25°C
5
μA
Repetitive Peak Off-State
Current
IRRM
VDRM=VRRM
TJ=125°C
3
mA
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.


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