Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
SI5406CDC Datasheet(PDF) 4 Page - Vishay Telefunken |
|
SI5406CDC Datasheet(HTML) 4 Page - Vishay Telefunken |
4 / 11 page www.vishay.com 4 Document Number: 68609 S-80795-Rev. A, 14-Apr-08 Vishay Siliconix Si5406CDC New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Forward Diode Voltage vs. Temp Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) 1 100 TJ = 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ ID = 250 µA - Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 012345 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 6.5 A 0 30 50 10 20 Time (s) 40 1 100 600 10 10-1 10-2 10-3 Safe Operating Area, Junction-to-Ambient VDS * VGS minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 C Single Pulse - Drain-to-Source Voltage (V) Limited by RDS(on)* BVDSS Limited DC 10 s 1 s 100 ms 10 ms 1 ms |
Número de pieza similar - SI5406CDC |
|
Descripción similar - SI5406CDC |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |