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SI4816BD Datasheet(PDF) 6 Page - Vishay Telefunken

No. de pieza SI4816BD
Descripción Electrónicos  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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SI4816BD Datasheet(HTML) 6 Page - Vishay Telefunken

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Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
Vishay Siliconix
Si4816BDY
CHANNEL-2 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
8
16
24
32
40
0
1234
5
VGS = 10 thru 5 V
3 V
VDS – Drain-to-Source Voltage (V)
2 V
4 V
0.000
0.004
0.008
0.012
0.016
0.020
0
5
10
15
20
25
30
VGS = 4.5 V
VGS = 10 V
ID – Drain Current (A)
0
1
2
3
4
5
6
0
3
6
9
12
15
VDS = 15 V
ID = 9.5 A
Qg – Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
8
16
24
32
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 °C
TC = 125 °C
- 55 °C
VGS – Gate-to-Source Voltage (V)
0
400
800
1200
1600
2000
0
6
12
18
24
30
Crss
Coss
Ciss
VDS – Drain-to-Source Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
VGS = 10 V
ID = 9.5 A
TJ – Junction Temperature (°C)


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